Wafer Bonding  
 
AWB PLATFORM - Outline SPECIFICATION

The AWB has the versatility to perform aligned: Adhesive, Anodic, Direct (High & Low Temperature) Eutectic, Glass frit, Solder & Thermo-compression bonding.

ALIGNMENT & BONDING IN ONE MACHINE

In-situ alignment 2 microns accuracy.
10-6mbar Vacuum to 2bar process gas
Voltage up to 2.5kV
Temperature up to 560° C
Forces up to 15kN
Market leading short bonding cycles / high throughput.
Cycle times for heating, vacuum, bonding & cooling down to 15mins

Automatic PC Control & Data acquisition
The machines are controlled via software in MANUAL or AUTOMATIC modes. All the bonding parameters e.g. current, voltage, integrated charge, temperature, chamber pressure, force, wafer separation, run parameters, recipes, wafer batch No for SPC and event logs are automatically stored in files & can be read in 'Note Pad' or MS EXCEL for graph plotting and trend analysis. Machines can also be networked.

Alignment:
In-situ alignment has advantages over other bonders (where alignment is made outside the bond chamber).

 
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  Alignment can be carried out hot or cold:
This eliminates alignment inaccuracies due to thermal expansion & mismatch between wafers, machine parts & platens A feature of the Bonder is that alignment and bonding are performed in-situ in a high vacuum chamber. The wafers are loaded cold and heated in the process chamber. For high accuracy alignment (2-5mm), they are only aligned & brought into contact after the process temperature is reached, thus avoiding differential thermal expansion effects which can compromise alignment.

Large wafer separation:
Allows large Temperature difference between wafers – ideal for getter activation or oxide reduction via process gas e.g. forming gas. Also allows fast, high vacuum & well defined bonding environment.

In-situ system:
Also enables visual confirmation just before the bonding process that the desired alignment is still being achieved. This is particularly useful when the wafers are not absolutely flat.
AML Wafer Bonding
Wafer sizes:
2”, 3", 4", 5”, 6” & 8”. (Also chips & odd shaped substrates, but without alignment)

Manipulator:
Enables in-situ alignment of wafers under vacuum and at elevated temperature
Contact force: Up to 10kN provided by hydraulic actuation
Precise wafer parallelism adjustment
Alignment accuracy 2 µm

Optics:
Twin Microscope – camera system with through the- lens illumination. Two CCD cameras and side-by-side display of images. Including IR capability. Simultaneous display of wafer separation & bonding force for complete alignment control.

Bonding Environment:
Vacuum, or process gas. Fully automated dry turbo pumping system ~ 10-6 mBar to 2bar absolute pressure

Temperature:
Both Upper & Lower Platens independently adjustable in 1 °C steps. Heating & Cooling rates are programmable. Max Temperature is 560°C

Electrodes (for Anodic Bonding):
Full size heated platens for both upper and lower electrodes for better bond uniformity. 0-2.5 kV DC up to 40 mA. Constant current or voltageoperation, for improved process control & stress management.
AML Wafer Bonding
Additional Options:
Triple stack bonding tool
Powered lid
Pressure control
Polymer Embossing Nano Imprint tool
High accuracy system for 1µm alignment

Platform Models:
AWB- 04 – 2” to 6” bonding
AWB- 08 – 6” & 8” bonding
AWE-07 – Polymer Micro Hot Embossing & Nano Print